Infineon Technologies DF200R12W1H3B27BOMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

-

Package/Case:

Module

Packaging:

Tray

Product Status:

Active

IGBT Type:

-

Configuration:

2 Independent

Voltage - Collector Emitter Breakdown (Max):

1200 V

Current - Collector (Ic) (Max):

30 A

Power - Max:

375 W

Vce(on) (Max) @ Vge, Ic:

1.3V @ 15V, 30A

Current - Collector Cutoff (Max):

1 mA

Input Capacitance (Cies) @ Vce:

2 nF @ 25 V

Input:

Standard

NTC Thermistor:

Yes

Operating Temperature:

-40°C ~ 150°C

Mounting Type:

Chassis Mount

Supplier Device Package:

Module