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Toshiba Semiconductor and Storage CUS10S30,H3F

Part No.:
CUS10S30,H3F
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single Diodes
Package:
SC-76, SOD-323
Description:
DIODE SCHOTTKY 30V 1A USC
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CUS10S30,H3F Information

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Manufacturer:
Toshiba Semiconductor and Storage
Series:
-
Package/Case:
SC-76, SOD-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
30 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
230 mV @ 100 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
500 µA @ 30 V
Capacitance @ Vr, F:
135pF @ 0V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
USC
Operating Temperature - Junction:
125°C (Max)
Image CUS10S30,H3F
Part Number CUS10S30,H3F
Manufacturer Toshiba Semiconductor and Storage
Series -
Package/Case SC-76, SOD-323
Packaging Tape & Reel (TR)
Product Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 30 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 230 mV @ 100 mA
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) -
Current - Reverse Leakage @ Vr 500 µA @ 30 V
Capacitance @ Vr, F 135pF @ 0V, 1MHz
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package USC
Operating Temperature - Junction 125°C (Max)
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