Texas Instruments CSD25211W1015

Product attributes

Attribute value

Manufacturer:

Texas Instruments

Series:

NexFET™

Package/Case:

6-UFBGA, DSBGA

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

20 V

Current - Continuous Drain (Id) @ 25°C:

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4.5V

Rds On (Max) @ Id, Vgs:

33mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id:

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

4.1 nC @ 4.5 V

Vgs (Max):

-6V

Input Capacitance (Ciss) (Max) @ Vds:

570 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

1W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-DSBGA (1x1.5)