Texas Instruments CSD19538Q2R

Product attributes

Attribute value

Manufacturer:

Texas Instruments

Series:

NexFET™

Package/Case:

6-WDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

4.6A (Ta), 13.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

59mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

5.6 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

454 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

2.5W (Ta), 20.2W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-WSON (2x2)