Texas Instruments CSD17313Q2Q1T

Product attributes

Attribute value

Manufacturer:

Texas Instruments

Series:

NexFET™

Package/Case:

6-WDFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

3V, 8V

Rds On (Max) @ Id, Vgs:

30mOhm @ 4A, 8V

Vgs(th) (Max) @ Id:

1.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

2.7 nC @ 4.5 V

Vgs (Max):

+10V, -8V

Input Capacitance (Ciss) (Max) @ Vds:

340 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

2.4W (Ta), 17W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

6-WSON (2x2)