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Central Semiconductor Corp CDM22011-600LRFP SL

Part No.:
CDM22011-600LRFP SL
Manufacturer:
Central Semiconductor Corp
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Description:
MOSFET N-CH 600V 11A TO220FP
Quantity:

Unit Price:$0

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CDM22011-600LRFP SL Information

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Manufacturer:
Central Semiconductor Corp
Series:
-
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
23.05 nC @ 10 V
Vgs (Max):
30V
Input Capacitance (Ciss) (Max) @ Vds:
763 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP
Image CDM22011-600LRFP SL
Part Number CDM22011-600LRFP SL
Manufacturer Central Semiconductor Corp
Series -
Package/Case TO-220-3 Full Pack
Packaging Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23.05 nC @ 10 V
Vgs (Max) 30V
Input Capacitance (Ciss) (Max) @ Vds 763 pF @ 100 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220FP
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