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Vishay General Semiconductor - Diodes Division BYG23T-M3/TR

Part No.:
BYG23T-M3/TR
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
Single Diodes
Package:
DO-214AC, SMA
Description:
DIODE AVALANCHE 1.3KV 1A DO214AC
Quantity:

Unit Price:$0

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BYG23T-M3/TR Information

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Manufacturer:
Vishay General Semiconductor - Diodes Division
Series:
-
Package/Case:
DO-214AC, SMA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Avalanche
Voltage - DC Reverse (Vr) (Max):
1300 V
Current - Average Rectified (Io):
1A
Voltage - Forward (Vf) (Max) @ If:
1.9 V @ 1 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
75 ns
Current - Reverse Leakage @ Vr:
5 µA @ 1300 V
Capacitance @ Vr, F:
9pF @ 4V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AC (SMA)
Operating Temperature - Junction:
-55°C ~ 150°C
Image BYG23T-M3/TR BYG23T-M3/TR3
Part Number BYG23T-M3/TR BYG23T-M3/TR3
Manufacturer Vishay General Semiconductor - Diodes Division Vishay General Semiconductor - Diodes Division
Series - -
Package/Case DO-214AC, SMA DO-214AC, SMA
Packaging Tape & Reel (TR) Tape & Reel (TR)
Product Status Active Active
Technology Avalanche Avalanche
Voltage - DC Reverse (Vr) (Max) 1300 V 1300 V
Current - Average Rectified (Io) 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 1 A 1.9 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 75 ns 75 ns
Current - Reverse Leakage @ Vr 5 µA @ 1300 V 5 µA @ 1300 V
Capacitance @ Vr, F 9pF @ 4V, 1MHz 9pF @ 4V, 1MHz
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package DO-214AC (SMA) DO-214AC (SMA)
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C
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