Rohm Semiconductor BSS670T116

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

650mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 10V

Rds On (Max) @ Id, Vgs:

680mOhm @ 650mA, 10V

Vgs(th) (Max) @ Id:

2V @ 10µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

47 pF @ 30 V

FET Feature:

-

Power Dissipation (Max):

200mW (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SST3