Infineon Technologies BSS126H6327XTSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

SIPMOS®

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel, Depletion Mode

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

21mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

0V, 10V

Rds On (Max) @ Id, Vgs:

500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id:

2.7V @ 8µA

Gate Charge (Qg) (Max) @ Vgs:

2.1 nC @ 5 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

28 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

500mW (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-SOT23