Infineon Technologies BSP321PL6327

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

SIPMOS®

Package/Case:

TO-261-4, TO-261AA

Packaging:

Bulk

Product Status:

Active

FET Type:

P-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

980mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

900mOhm @ 980mA, 10V

Vgs(th) (Max) @ Id:

4V @ 380µA

Gate Charge (Qg) (Max) @ Vgs:

12 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

319 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1.8W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-SOT223-4-21