Infineon Technologies BSP123E6327T

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

SIPMOS®

Package/Case:

TO-261-4, TO-261AA

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

370mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.8V, 10V

Rds On (Max) @ Id, Vgs:

6Ohm @ 370mA, 10V

Vgs(th) (Max) @ Id:

1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:

2.4 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

70 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

1.79W (Ta)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-SOT223-4