Infineon Technologies BSM75GB170DN2HOSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

-

Package/Case:

Module

Packaging:

Bulk

Product Status:

Obsolete

IGBT Type:

-

Configuration:

Half Bridge

Voltage - Collector Emitter Breakdown (Max):

1700 V

Current - Collector (Ic) (Max):

110 A

Power - Max:

625 W

Vce(on) (Max) @ Vge, Ic:

3.9V @ 15V, 75A

Current - Collector Cutoff (Max):

-

Input Capacitance (Cies) @ Vce:

11 nF @ 25 V

Input:

Standard

NTC Thermistor:

No

Operating Temperature:

150°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

Module