Rohm Semiconductor BSM600D12P3G001

Product attributes

Attribute value

Manufacturer:

Rohm Semiconductor

Series:

-

Package/Case:

Module

Packaging:

Bulk

Product Status:

Active

Technology:

Silicon Carbide (SiC)

Configuration:

2 N-Channel (Half Bridge)

FET Feature:

-

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

600A (Tc)

Rds On (Max) @ Id, Vgs:

-

Vgs(th) (Max) @ Id:

5.6V @ 182mA

Gate Charge (Qg) (Max) @ Vgs:

-

Input Capacitance (Ciss) (Max) @ Vds:

31000pF @ 10V

Power - Max:

2450W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

Module