Infineon Technologies BSC105N10LSFGATMA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

11.4A (Ta), 90A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

10.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

2.4V @ 110µA

Gate Charge (Qg) (Max) @ Vgs:

53 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3900 pF @ 50 V

FET Feature:

-

Power Dissipation (Max):

156W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-TDSON-8-1