Infineon Technologies BSB012N03LX3G

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

OptiMOS™

Package/Case:

3-WDSON

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

39A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Rds On (Max) @ Id, Vgs:

1.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

169 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

16900 pF @ 15 V

FET Feature:

-

Power Dissipation (Max):

2.8W (Ta), 89W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

MG-WDSON-2, CanPAK M™