Infineon Technologies BCR555E6327HTSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Tape & Reel (TR)

Product Status:

Last Time Buy

Transistor Type:

PNP - Pre-Biased

Current - Collector (Ic) (Max):

500 mA

Voltage - Collector Emitter Breakdown (Max):

50 V

Resistor - Base (R1):

2.2 kOhms

Resistor - Emitter Base (R2):

10 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce:

70 @ 50mA, 5V

Vce Saturation (Max) @ Ib, Ic:

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max):

100nA (ICBO)

Frequency - Transition:

150 MHz

Power - Max:

330 mW

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PG-SOT23