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Infineon Technologies BCR119E6327HTSA1

Part No.:
BCR119E6327HTSA1
Manufacturer:
Infineon Technologies
Category:
Single, Pre-Biased Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Description:
TRANS PREBIAS NPN 50V SOT23
Quantity:

Unit Price:$0

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BCR119E6327HTSA1 Information

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Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
NPN - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
4.7 kOhms
Resistor - Emitter Base (R2):
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
150 MHz
Power - Max:
200 mW
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23
Image BCR119E6327HTSA1
Part Number BCR119E6327HTSA1
Manufacturer Infineon Technologies
Series -
Package/Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Product Status Last Time Buy
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 150 MHz
Power - Max 200 mW
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-SOT23
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