Infineon Technologies AUIRF7665S2TR

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

HEXFET®

Package/Case:

DirectFET™ Isometric SB

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

100 V

Current - Continuous Drain (Id) @ 25°C:

4.1A (Ta), 14.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

62mOhm @ 8.9A, 10V

Vgs(th) (Max) @ Id:

5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:

13 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

515 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

2.4W (Ta), 30W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

DIRECTFET SB