ANBON SEMICONDUCTOR (INT'L) LIMITED ASZM040120T

Product attributes

Attribute value

Manufacturer:

ANBON SEMICONDUCTOR (INT'L) LIMITED

Series:

-

Package/Case:

TO-247-4

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V, 20V

Rds On (Max) @ Id, Vgs:

32mOhm @ 40A, 20V

Vgs(th) (Max) @ Id:

3.6V @ 9.5mA

Gate Charge (Qg) (Max) @ Vgs:

87 nC @ 18 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

2820 pF @ 1000 V

FET Feature:

-

Power Dissipation (Max):

340W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4