Microsemi Corporation APTGT50DH120T3G

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

-

Package/Case:

SP3

Packaging:

Bulk

Product Status:

Obsolete

IGBT Type:

Trench Field Stop

Configuration:

Asymmetrical Bridge

Voltage - Collector Emitter Breakdown (Max):

1200 V

Current - Collector (Ic) (Max):

75 A

Power - Max:

277 W

Vce(on) (Max) @ Vge, Ic:

2.1V @ 15V, 50A

Current - Collector Cutoff (Max):

250 µA

Input Capacitance (Cies) @ Vce:

3.6 nF @ 25 V

Input:

Standard

NTC Thermistor:

Yes

Operating Temperature:

-40°C ~ 150°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

SP3