Microsemi Corporation APTC90DAM60T1G

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

CoolMOS™

Package/Case:

SP1

Packaging:

Tray

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

900 V

Current - Continuous Drain (Id) @ 25°C:

59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

60mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:

3.5V @ 6mA

Gate Charge (Qg) (Max) @ Vgs:

540 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

13600 pF @ 100 V

FET Feature:

-

Power Dissipation (Max):

462W (Tc)

Operating Temperature:

-40°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

SP1