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Microchip Technology APT80GA90S

Part No.:
APT80GA90S
Manufacturer:
Microchip Technology
Category:
Single IGBTs
Package:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Description:
IGBT PT 900V 145A D3PAK
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Unit Price:$0

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APT80GA90S Information

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Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
POWER MOS 8®
Package/Case:
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging:
Tube
Product Status:
Active
IGBT Type:
PT
Voltage - Collector Emitter Breakdown (Max):
900 V
Current - Collector (Ic) (Max):
145 A
Current - Collector Pulsed (Icm):
239 A
Vce(on) (Max) @ Vge, Ic:
3.1V @ 15V, 47A
Power - Max:
625 W
Switching Energy:
1.625mJ (on), 1.389mJ (off)
Input Type:
Standard
Gate Charge:
200 nC
Td (on/off) @ 25°C:
18ns/149ns
Test Condition:
600V, 47A, 4.7Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D3PAK
Image APT80GA90S
Part Number APT80GA90S
Manufacturer Microchip Technology
Series POWER MOS 8®
Package/Case TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging Tube
Product Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 900 V
Current - Collector (Ic) (Max) 145 A
Current - Collector Pulsed (Icm) 239 A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 47A
Power - Max 625 W
Switching Energy 1.625mJ (on), 1.389mJ (off)
Input Type Standard
Gate Charge 200 nC
Td (on/off) @ 25°C 18ns/149ns
Test Condition 600V, 47A, 4.7Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package D3PAK
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