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Microsemi Corporation APT70GR65B2SCD30

Part No.:
APT70GR65B2SCD30
Manufacturer:
Microsemi Corporation
Category:
Single IGBTs
Package:
TO-247-3
Description:
INSULATED GATE BIPOLAR TRANSISTO
Quantity:

Unit Price:$0

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APT70GR65B2SCD30 Information

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Attribute value
Manufacturer:
Microsemi Corporation
Series:
-
Package/Case:
TO-247-3
Packaging:
Bulk
Product Status:
Obsolete
IGBT Type:
NPT
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
134 A
Current - Collector Pulsed (Icm):
260 A
Vce(on) (Max) @ Vge, Ic:
2.4V @ 15V, 70A
Power - Max:
595 W
Switching Energy:
-
Input Type:
-
Gate Charge:
305 nC
Td (on/off) @ 25°C:
19ns/170ns
Test Condition:
433V, 70A, 4.3Ohm, 15V
Reverse Recovery Time (trr):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
T-MAX™ [B2]
Image APT70GR65B2SCD30
Part Number APT70GR65B2SCD30
Manufacturer Microsemi Corporation
Series -
Package/Case TO-247-3
Packaging Bulk
Product Status Obsolete
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 134 A
Current - Collector Pulsed (Icm) 260 A
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 70A
Power - Max 595 W
Switching Energy -
Input Type -
Gate Charge 305 nC
Td (on/off) @ 25°C 19ns/170ns
Test Condition 433V, 70A, 4.3Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package T-MAX™ [B2]
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