Microchip Technology APT45GP120B2DQ2G

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

POWER MOS 7®

Package/Case:

TO-247-3 Variant

Packaging:

Tube

Product Status:

Active

IGBT Type:

PT

Voltage - Collector Emitter Breakdown (Max):

1200 V

Current - Collector (Ic) (Max):

113 A

Current - Collector Pulsed (Icm):

170 A

Vce(on) (Max) @ Vge, Ic:

3.9V @ 15V, 45A

Power - Max:

625 W

Switching Energy:

900µJ (on), 905µJ (off)

Input Type:

Standard

Gate Charge:

185 nC

Td (on/off) @ 25°C:

18ns/100ns

Test Condition:

600V, 45A, 5Ohm, 15V

Reverse Recovery Time (trr):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

-