Microchip Technology APT35GP120B2D2G

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

POWER MOS 7®

Package/Case:

TO-247-3 Variant

Packaging:

Tube

Product Status:

Active

IGBT Type:

PT

Voltage - Collector Emitter Breakdown (Max):

1200 V

Current - Collector (Ic) (Max):

96 A

Current - Collector Pulsed (Icm):

140 A

Vce(on) (Max) @ Vge, Ic:

3.9V @ 15V, 35A

Power - Max:

540 W

Switching Energy:

1mJ (on), 1.185mJ (off)

Input Type:

Standard

Gate Charge:

150 nC

Td (on/off) @ 25°C:

14ns/99ns

Test Condition:

800V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr):

85 ns

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

T-MAX™ [B2]