Microchip Technology APT35GA90B

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

POWER MOS 8™

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

IGBT Type:

PT

Voltage - Collector Emitter Breakdown (Max):

900 V

Current - Collector (Ic) (Max):

63 A

Current - Collector Pulsed (Icm):

105 A

Vce(on) (Max) @ Vge, Ic:

3.1V @ 15V, 18A

Power - Max:

290 W

Switching Energy:

642µJ (on), 382µJ (off)

Input Type:

Standard

Gate Charge:

84 nC

Td (on/off) @ 25°C:

12ns/104ns

Test Condition:

600V, 18A, 10Ohm, 15V

Reverse Recovery Time (trr):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247 [B]