Microsemi Corporation APT11GP60BDQBG

Product attributes

Attribute value

Manufacturer:

Microsemi Corporation

Series:

POWER MOS 7®

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Obsolete

IGBT Type:

PT

Voltage - Collector Emitter Breakdown (Max):

600 V

Current - Collector (Ic) (Max):

41 A

Current - Collector Pulsed (Icm):

45 A

Vce(on) (Max) @ Vge, Ic:

2.7V @ 15V, 11A

Power - Max:

187 W

Switching Energy:

46µJ (on), 90µJ (off)

Input Type:

Standard

Gate Charge:

40 nC

Td (on/off) @ 25°C:

7ns/29ns

Test Condition:

400V, 11A, 5Ohm, 15V

Reverse Recovery Time (trr):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-3