Microchip Technology APT102GA60B2

Product attributes

Attribute value

Manufacturer:

Microchip Technology

Series:

POWER MOS 8™

Package/Case:

TO-247-3 Variant

Packaging:

Tube

Product Status:

Obsolete

IGBT Type:

PT

Voltage - Collector Emitter Breakdown (Max):

600 V

Current - Collector (Ic) (Max):

183 A

Current - Collector Pulsed (Icm):

307 A

Vce(on) (Max) @ Vge, Ic:

2.5V @ 15V, 62A

Power - Max:

780 W

Switching Energy:

1.354mJ (on), 1.614mJ (off)

Input Type:

Standard

Gate Charge:

294 nC

Td (on/off) @ 25°C:

28ns/212ns

Test Condition:

400V, 62A, 4.7Ohm, 15V

Reverse Recovery Time (trr):

-

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

-