Infineon Technologies AIMZHN120R080M1TXKSA1

Product attributes

Attribute value

Manufacturer:

Infineon Technologies

Series:

-

Package/Case:

TO-247-4

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V, 20V

Rds On (Max) @ Id, Vgs:

100mOhm @ 10A, 20V

Vgs(th) (Max) @ Id:

5.1V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:

24 nC @ 20 V

Vgs (Max):

+23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:

671 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

169W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Through Hole

Supplier Device Package:

PG-TO247-4-14