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Infineon Technologies AIDW20S65C5XKSA1
- Part No.:
- AIDW20S65C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-3
- Description:
- DIODE SIL CARB 650V 20A TO247-3
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
AIDW20S65C5XKSA1 Information
- Specifications
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 20A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 20 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 120 µA @ 650 V
- Capacitance @ Vr, F:
- 584pF @ 1V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q100/101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3-41
- Operating Temperature - Junction:
- -40°C ~ 175°C
| Image |  |
| Part Number | AIDW20S65C5XKSA1 |
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™ |
| Package/Case | TO-247-3 |
| Packaging | Tube |
| Product Status | Obsolete |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 120 µA @ 650 V |
| Capacitance @ Vr, F | 584pF @ 1V, 1MHz |
| Grade | Automotive |
| Qualification | AEC-Q100/101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Operating Temperature - Junction | -40°C ~ 175°C |
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