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STMicroelectronics STF13N60M2

Part No.:
STF13N60M2
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
TO-220-3 Full Pack
Description:
STF13N60M2 - 600V N-Channel Power MOSFET (MDmesh™ M2, TO-220FP)STF13N60M2 is a high-voltage N-channel Power MOSFET from STMicroelectronics based on MDmesh™ M2 technology. It is designed for high-efficiency offline power conversion applications, offering …
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Product Details

STF13N60M2 - 600V N-Channel Power MOSFET (MDmesh™ M2, TO-220FP)

STF13N60M2 is a high-voltage N-channel Power MOSFET from STMicroelectronics based on MDmesh™ M2 technology. It is designed for high-efficiency offline power conversion applications, offering a balance of low conduction loss, fast switching speed, and robust avalanche capability.

This content is intended for engineering reference and component selection. Always verify final electrical characteristics with the official datasheet before production design.

Overview

STF13N60M2 is optimized for high-voltage switching applications such as SMPS, PFC stages, and industrial power systems. Using ST's MDmesh™ M2 process, it significantly improves switching efficiency compared to traditional MOSFET technologies.

With a 600V drain-source rating, this device is suitable for offline AC-DC conversion. It provides improved efficiency at medium-to-high frequency operation, making it a solid choice for energy-efficient power supply designs.

Design note: MDmesh™ devices are optimized for switching performance. Proper gate resistance and layout optimization are essential to fully achieve efficiency benefits.

Key Advantages

High-efficiency switching

MDmesh™ M2 structure reduces switching losses for improved power efficiency.

600V high-voltage capability

Suitable for offline SMPS and industrial AC-DC conversion systems.

Low conduction losses

Optimized RDS(on) helps reduce heat generation in continuous operation.

Improved ruggedness

Good avalanche energy handling improves reliability in harsh conditions.

Feature Summary

Drain-source voltage

600V rated for offline power applications.

MDmesh™ M2 technology

Enhanced switching performance and reduced losses.

Fast switching behavior

Supports higher frequency SMPS operation.

High reliability

Robust design for industrial and power supply environments.

Package & Footprint

The STF13N60M2 is commonly available in a TO-220FP fully insulated package, which provides electrical isolation and simplified thermal design.

Design notes
  • Use proper heatsink for thermal dissipation in high-power operation.
  • Insulated tab simplifies mounting without additional isolation pad.
  • Follow recommended PCB layout for switching performance.

Always refer to the latest datasheet for exact mechanical dimensions.

Pin Functions

Standard MOSFET pin configuration is used for the STF13N60M2.

G
Gate – controls MOSFET switching.
D
Drain – high-voltage power terminal.
S
Source – reference return path.

Key Specifications

Device Type N-Channel Power MOSFET
Technology MDmesh™ M2
Drain-Source Voltage 600V
Continuous Drain Current ~13A (typical class reference)
Package TO-220FP
Mounting Type Through Hole
Application SMPS / PFC / Industrial Power
Operating Temperature -55°C to +150°C
Base Product STF13N60

Equivalent

Possible alternative MOSFETs with similar 600V class performance include:

  • NCE65TF130F – NCE Power, 600V Super Junction MOSFET, similar SMPS use case
  • CS10N65FA9R – CR Micro, 600–650V MOSFET, general-purpose switching
  • RU65R580P – Ruichips, high-voltage SJ MOSFET alternative
  • AP65AN750IN – APEC, high-voltage switching MOSFET for SMPS

Always validate RDS(on), gate charge, and switching loss before substitution.

Manufacturer Information

STMicroelectronics is a global semiconductor manufacturer specializing in power devices, analog ICs, and embedded solutions.

  • Core products: Power MOSFETs, MCUs, analog ICs
  • Main markets: Industrial, automotive, consumer electronics
  • Support: Datasheets, application notes, reference designs

Applications

Typical use cases include:

SMPS Power Supply

Offline flyback and forward converters.

PFC Circuits

Power factor correction stages.

LED Drivers

High-efficiency lighting power systems.

Industrial Power

General AC-DC conversion systems.

Quality & Authenticity

  • Incoming inspection and lot traceability
  • ESD-safe handling procedures
  • Counterfeit risk control for power devices

FAQ

Is STF13N60M2 suitable for SMPS?
Yes, it is designed for high-efficiency SMPS and offline power conversion systems.
What is MDmesh™ M2 technology?
It is ST's optimized MOSFET structure that reduces switching and conduction losses.

Disclaimer

This content is for reference only. Always refer to the official STMicroelectronics datasheet for final design validation.

STF13N60M2 Information

  • Specifications
  • Tags
Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ II Plus
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
580 pF @ 100 V
FET Feature:
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Qualification:
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP
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