Renesas Electronics Corporation 2SK4150TZ-E

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:

Tape & Reel (TR)

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

250 V

Current - Continuous Drain (Id) @ 25°C:

400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 4V

Rds On (Max) @ Id, Vgs:

5.7Ohm @ 200mA, 4V

Vgs(th) (Max) @ Id:

-

Gate Charge (Qg) (Max) @ Vgs:

3.7 nC @ 4 V

Vgs (Max):

±10V

Input Capacitance (Ciss) (Max) @ Vds:

80 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

750mW (Ta)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-92