Renesas Electronics Corporation 2SK1582-T1B-A

Product attributes

Attribute value

Manufacturer:

Renesas Electronics Corporation

Series:

-

Package/Case:

TO-236-3, SC-59, SOT-23-3

Packaging:

Bulk

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

30 V

Current - Continuous Drain (Id) @ 25°C:

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):

4V, 10V

Rds On (Max) @ Id, Vgs:

3Ohm @ 10mA, 10V

Vgs(th) (Max) @ Id:

1.8V @ 1µA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

28 pF @ 5 V

FET Feature:

-

Power Dissipation (Max):

200mW (Ta)

Operating Temperature:

150°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SC-59