Toshiba Semiconductor and Storage 2SD2406-Y(F)

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-220-3 Full Pack

Packaging:

Tube

Product Status:

Obsolete

Transistor Type:

NPN

Current - Collector (Ic) (Max):

4 A

Voltage - Collector Emitter Breakdown (Max):

80 V

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 300mA, 3A

Current - Collector Cutoff (Max):

30µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:

120 @ 500mA, 5V

Power - Max:

25 W

Frequency - Transition:

8MHz

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220NIS