Vishay Siliconix 2N6660JTXL02

Product attributes

Attribute value

Manufacturer:

Vishay Siliconix

Series:

-

Package/Case:

TO-205AD, TO-39-3 Metal Can

Packaging:

Tube

Product Status:

Obsolete

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

60 V

Current - Continuous Drain (Id) @ 25°C:

990mA (Tc)

Drive Voltage (Max Rds On, Min Rds On):

5V, 10V

Rds On (Max) @ Id, Vgs:

3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

-

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

50 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

725mW (Ta), 6.25W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-205AD (TO-39)