GeneSiC Semiconductor 1N8026-GA

Product attributes

Attribute value

Manufacturer:

GeneSiC Semiconductor

Series:

-

Package/Case:

TO-257-3

Packaging:

Tube

Product Status:

Obsolete

Technology:

SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):

1200 V

Current - Average Rectified (Io):

8A

Voltage - Forward (Vf) (Max) @ If:

1.6 V @ 2.5 A

Speed:

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):

0 ns

Current - Reverse Leakage @ Vr:

10 µA @ 1200 V

Capacitance @ Vr, F:

237pF @ 1V, 1MHz

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-257

Operating Temperature - Junction:

-55°C ~ 250°C