UMW 1N65G

Product attributes

Attribute value

Manufacturer:

UMW

Series:

UMW

Package/Case:

TO-261-4, TO-261AA

Packaging:

Cut Tape (CT)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

650 V

Current - Continuous Drain (Id) @ 25°C:

1A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

11Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

4.8 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

150 pF @ 25 V

FET Feature:

-

Power Dissipation (Max):

-

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

SOT-223