Toshiba Semiconductor and Storage XPJR6604PB,LXHQ

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSIX-H

Package/Case:

5-PowerSFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

200A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

0.66mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:

3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:

128 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

11380 pF @ 10 V

FET Feature:

-

Power Dissipation (Max):

375W (Tc)

Operating Temperature:

175°C

Grade:

Automotive

Qualification:

AEC-Q101

Mounting Type:

Surface Mount

Supplier Device Package:

S-TOGL™