YAGEO XSEMI XP4N2R1MT

Product attributes

Attribute value

Manufacturer:

YAGEO XSEMI

Series:

XP4N2R1

Package/Case:

8-PowerLDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

40 V

Current - Continuous Drain (Id) @ 25°C:

37.5A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

2.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:

154 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

9056 pF @ 20 V

FET Feature:

-

Power Dissipation (Max):

5W (Ta), 104W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

PMPAK® 5 x 6