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WeEn Semiconductors WNSC2D08650TJ

Part No.:
WNSC2D08650TJ
Manufacturer:
WeEn Semiconductors
Category:
Single Diodes
Package:
4-VSFN Exposed Pad
Description:
DIODE SIL CARBIDE 650V 8A 5DFN
Quantity:

Unit Price:$0

Ext Price:$0

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WNSC2D08650TJ Information

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Manufacturer:
WeEn Semiconductors
Series:
-
Package/Case:
4-VSFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
8A
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 8 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
40 µA @ 650 V
Capacitance @ Vr, F:
260pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (8x8)
Operating Temperature - Junction:
175°C
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