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| Part Number | VS-SC40FA65 | VS-SC80FA65 | VS-SC120FA65 | VS-SC200FA65 | VS-SC160FA65 |
| Manufacturer | Vishay | Vishay | Vishay | Vishay | Vishay |
| Series | - | - | - | - | - |
| Package/Case | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC |
| Packaging | Strip | Strip | Strip | Strip | Strip |
| Product Status | Active | Active | Active | Active | Active |
| Diode Configuration | 2 Independent | 2 Independent | 2 Independent | 2 Independent | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V | 650 V | 650 V | 650 V | 650 V |
| Current - Average Rectified (Io) (per Diode) | 20A | 40A | 60A | 100A | 80A |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 20 A | 1.58 V @ 40 A | 1.59 V @ 60 A | 1.6 V @ 100 A | 1.59 V @ 80 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V | 80 µA @ 650 V | 120 µA @ 650 V | 200 µA @ 650 V | 1.6 µA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
| Grade | - | - | - | - | - |
| Qualification | - | - | - | - | - |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Supplier Device Package | SOT-227 | SOT-227 | SOT-227 | SOT-227 | SOT-227 |
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