Vishay General Semiconductor - Diodes Division VS-GB100TP120N

Product attributes

Attribute value

Manufacturer:

Vishay General Semiconductor - Diodes Division

Series:

-

Package/Case:

INT-A-Pak

Packaging:

Bulk

Product Status:

Obsolete

IGBT Type:

-

Configuration:

Half Bridge

Voltage - Collector Emitter Breakdown (Max):

1200 V

Current - Collector (Ic) (Max):

200 A

Power - Max:

650 W

Vce(on) (Max) @ Vge, Ic:

2.2V @ 15V, 100A

Current - Collector Cutoff (Max):

5 mA

Input Capacitance (Cies) @ Vce:

7.43 nF @ 25 V

Input:

Standard

NTC Thermistor:

No

Operating Temperature:

150°C (TJ)

Mounting Type:

Chassis Mount

Supplier Device Package:

INT-A-PAK