Qorvo UHB100SC12E1BC3N

Product attributes

Attribute value

Manufacturer:

Qorvo

Series:

-

Package/Case:

Module

Packaging:

Bulk

Product Status:

Active

Technology:

SiCFET (Silicon Carbide)

Configuration:

2 P-Channel (Half Bridge)

FET Feature:

Silicon Carbide (SiC)

Drain to Source Voltage (Vdss):

1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Rds On (Max) @ Id, Vgs:

12mOhm @ 70A, 12V

Vgs(th) (Max) @ Id:

6V @ 40mA

Gate Charge (Qg) (Max) @ Vgs:

170nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds:

5859pF @ 800V

Power - Max:

417W (Tc)

Operating Temperature:

-55°C ~ 150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Chassis Mount

Supplier Device Package:

Module