Qorvo UF4C120053B7S

Product attributes

Attribute value

Manufacturer:

Qorvo

Series:

-

Package/Case:

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:

Bulk

Product Status:

Active

FET Type:

P-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

34A (Tj)

Drive Voltage (Max Rds On, Min Rds On):

12V

Rds On (Max) @ Id, Vgs:

67mOhm @ 20A, 12V

Vgs(th) (Max) @ Id:

6V @ 10mA

Gate Charge (Qg) (Max) @ Vgs:

37.8 nC @ 15 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

1370 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

250W (Tc)

Operating Temperature:

-55°C ~ 175°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

D2PAK-7L