Toshiba Semiconductor and Storage TW070J120B,S1Q

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-3P-3, SC-65-3

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

20V

Rds On (Max) @ Id, Vgs:

90mOhm @ 18A, 20V

Vgs(th) (Max) @ Id:

5.8V @ 20mA

Gate Charge (Qg) (Max) @ Vgs:

67 nC @ 20 V

Vgs (Max):

±25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

1680 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

272W (Tc)

Operating Temperature:

-55°C ~ 175°C

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-3P(N)