Toshiba Semiconductor and Storage TW015Z120C,S1F

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-247-4

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):

1200 V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

18V

Rds On (Max) @ Id, Vgs:

21mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:

5V @ 11.7mA

Gate Charge (Qg) (Max) @ Vgs:

158 nC @ 18 V

Vgs (Max):

+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds:

6000 pF @ 800 V

FET Feature:

-

Power Dissipation (Max):

431W (Tc)

Operating Temperature:

175°C

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247-4L(X)