Toshiba Semiconductor and Storage TRS20N120HB,S1Q

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

-

Package/Case:

TO-247-3

Packaging:

Tube

Product Status:

Active

Diode Configuration:

1 Pair Common Cathode

Technology:

SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):

1200 V

Current - Average Rectified (Io) (per Diode):

32A

Voltage - Forward (Vf) (Max) @ If:

1.45 V @ 10 A

Speed:

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):

0 ns

Current - Reverse Leakage @ Vr:

80 µA @ 1200 V

Operating Temperature - Junction:

175°C

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-247