Toshiba Semiconductor and Storage TPH3R008QM,LQ

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSX-H

Package/Case:

8-PowerTDFN

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

80 V

Current - Continuous Drain (Id) @ 25°C:

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

6V, 10V

Rds On (Max) @ Id, Vgs:

3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:

3.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:

71 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

7200 pF @ 40 V

FET Feature:

-

Power Dissipation (Max):

3W (Ta), 180W (Tc)

Operating Temperature:

175°C

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

8-SOP Advance (5x5.75)