Toshiba Semiconductor and Storage TK9R7A15Q5,S4X

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

U-MOSX-H

Package/Case:

TO-220-3 Full Pack

Packaging:

Tube

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

150 V

Current - Continuous Drain (Id) @ 25°C:

49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):

8V, 10V

Rds On (Max) @ Id, Vgs:

9.7mOhm @ 24.5A, 10V

Vgs(th) (Max) @ Id:

4.5V @ 1.1mA

Gate Charge (Qg) (Max) @ Vgs:

50 nC @ 10 V

Vgs (Max):

±20V

Input Capacitance (Ciss) (Max) @ Vds:

3690 pF @ 75 V

FET Feature:

-

Power Dissipation (Max):

45W (Tc)

Operating Temperature:

175°C

Grade:

-

Qualification:

-

Mounting Type:

Through Hole

Supplier Device Package:

TO-220SIS