Toshiba Semiconductor and Storage TK31V60W,LVQ

Product attributes

Attribute value

Manufacturer:

Toshiba Semiconductor and Storage

Series:

DTMOSIV

Package/Case:

4-VSFN Exposed Pad

Packaging:

Tape & Reel (TR)

Product Status:

Active

FET Type:

N-Channel

Technology:

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):

600 V

Current - Continuous Drain (Id) @ 25°C:

30.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):

10V

Rds On (Max) @ Id, Vgs:

98mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id:

3.7V @ 1.5mA

Gate Charge (Qg) (Max) @ Vgs:

86 nC @ 10 V

Vgs (Max):

±30V

Input Capacitance (Ciss) (Max) @ Vds:

3000 pF @ 300 V

FET Feature:

-

Power Dissipation (Max):

240W (Tc)

Operating Temperature:

150°C (TJ)

Grade:

-

Qualification:

-

Mounting Type:

Surface Mount

Supplier Device Package:

4-DFN-EP (8x8)